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BSC093N04LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 13A/49A TDSON. Review the specifications below when checking this part for your BOM.
The BSC093N04LSGATMA1 is an N-channel OptiMOS™3 power transistor in a PG-TDSON-8 package. It features a drain-source voltage of 40 V and a maximum on-resistance of 9.3 mΩ at VGS=10 V. The device supports a continuous drain current of 49 A at TC=25 °C and a pulsed current of 196 A. Total gate charge is typically 18 nC at VGS=10 V. Thermal resistance from junction to case is 3.6 K/W via the bottom pad. Operating temperature ranges from -55 °C to 150 °C.
Verify the component marking '093N04LS' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the specified tape-and-reel packaging format. Confirm RoHS compliance and halogen-free status requirements align with project specifications before finalizing procurement orders.
Select this component when a 40 V rating and high current handling are required in a compact surface-mount footprint. The logic-level threshold allows direct drive from standard logic controllers. Evaluate PCB copper area for thermal management, as performance depends significantly on the heat dissipation path through the exposed pad.
This part belongs to Infineon's OptiMOS™3 family, designed for general-purpose power switching. It utilizes advanced trench technology to minimize conduction losses while maintaining robust switching characteristics. The PG-TDSON-8 package provides efficient thermal transfer compared to traditional leaded packages.
BSC093N04LS G
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