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BSC093N15NS5SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC093N15NS5SCATMA1
- Description：TRENCH >=100V
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：9.3mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 107µA
- Gate Charge (Qg) (Max) @ Vgs：40.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3230 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC093N15NS5SCATMA1
Single FETs, MOSFETs Overview
The BSC093N15NS5SCATMA1 is an N-channel OptiMOS™ 5 power transistor rated for a maximum drain-source voltage of 150 V. It features a maximum continuous drain current of 89 A at 25 °C and a typical on-state resistance (RDS(on)) of 9.3 mΩ at VGS = 10 V. The device supports a pulsed drain current of 356 A and operates within a junction temperature range of -55 °C to 175 °C. Packaged in a PG-VSON-8/PG-WSON-8 dual-side cooled format, it offers a thermal resistance from junction to case bottom of 0.54 K/W.
Single FETs, MOSFETs Feature Summary
- Dual-side cooled package providing the lowest junction-to-top thermal resistance
- Optimized gate charge multiplied by product RDS(on) figure of merit
- Very low reverse recovery charge (Qrr)
- Qualified for industrial applications according to JEDEC JESD47, JESD22, and J-STD-020
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification
- Industrial power conversion systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component matches the PG-VSON-8 or PG-WSON-8 package outline dimensions provided in the datasheet. Confirm RoHS compliance and lead-free plating status through the manufacturer's certification documents before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing for high-efficiency synchronous rectification requiring low conduction losses. The dual-side cooling capability makes it suitable for applications demanding superior thermal management. Evaluate the total gate charge and output capacitance parameters to ensure compatibility with the intended driver circuitry and switching frequency requirements.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family of power transistors designed for 150 V applications. It utilizes advanced silicon technology to achieve low on-resistance while maintaining robust avalanche characteristics. The device is specifically engineered to minimize switching losses and improve overall system efficiency in compact power modules.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume pinout or electrical equivalence with other MOSFETs without explicit datasheet confirmation.
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