BSC094N06LS5ATMA1

$1.30

Description：MOSFET N-CHANNEL 60V 47A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ef6f8efb81d5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC094N06LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CHANNEL 60V 47A 8TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC094N06LS5ATMA1

Description：MOSFET N-CHANNEL 60V 47A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.4mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：2.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs：9.4 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC094N06LS5ATMA1

BSC094N06LS5ATMA1

Single FETs, MOSFETs Overview

The BSC094N06LS5ATMA1 is a single N-channel OptiMOS™ Power-Transistor rated at 60 V. It features a maximum drain-source on-state resistance of 9.4 mΩ and supports a continuous drain current of 47 A at 25°C case temperature. The device utilizes a PG-TDSON-8 package with pins 1-3 connected to the source, pin 4 to the gate, and pins 5-8 to the drain. Key electrical parameters include a gate threshold voltage range of 1.1 V to 2.3 V, total gate charge of 7 nC (0V to 4.5V), and output charge of 13 nC. Thermal characteristics specify a junction-to-case thermal resistance of 2.1 K/W typ.

Single FETs, MOSFETs Feature Summary

Logic-level operation optimized for high-performance synchronous rectification in SMPS applications.
Superior thermal resistance provided by the SuperSO8 package design.
100% avalanche tested for enhanced ruggedness.
Qualified according to JEDEC standards for target applications.

Single FETs, MOSFETs Applications

Synchronous rectification in switching mode power supplies
Low-side switching applications requiring logic level drive

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity against Infineon Technologies official documentation. Confirm that the ordering code matches the specific package marking and revision history. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet specifications before integration into production systems.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low RDS(on) and logic level compatibility is required. The PG-TDSON-8 package offers compact surface-mount integration. Consider the thermal resistance values and pulsed drain current capabilities relative to the specific application's duty cycle and cooling conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family of power transistors manufactured by Infineon Technologies. It is designed to provide high performance in small packages, balancing low conduction losses with efficient switching characteristics suitable for modern power electronics designs.