ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC100N06LS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 12A/50A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC100N06LS3GATMA1
- Description：MOSFET N-CH 60V 12A/50A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC100N06LS3GATMA1
Single FETs, MOSFETs Overview
The BSC100N06LS3GATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 60V drain-source voltage rating and operates in enhancement mode. The device supports a continuous drain current of 12A at ambient temperature and up to 50A at case temperature. Key electrical parameters include a maximum on-resistance of 10 milliohms at 50A, a gate charge of 2.5nC, and a threshold voltage of 2V. It is housed in a PG-TDSON-8 surface-mount package with a power dissipation capability of 2.5W at ambient and 50W at case temperatures.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides low on-resistance for high efficiency
- Enhanced thermal performance via TDSON-8 package design
- Low gate charge facilitates fast switching applications
Single FETs, MOSFETs Applications
- Synchronous rectification circuits
- Solar micro-inverters
- Isolated DC-DC converters
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix GATMA1 to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the required package variant exactly. Cross-reference the manufacturer datasheet for the latest environmental declarations and handling precautions before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 60V N-channel MOSFET with optimized switching speed and low conduction losses is required. The TDSON-8 package suits space-constrained designs. Evaluate thermal management requirements based on the specified ambient versus case power dissipation ratings for the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family of silicon-based power transistors. It is designed for general-purpose switching applications requiring high reliability and efficiency. The PG-TDSON-8 package offers a compact footprint suitable for modern surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 60V rating, N-channel configuration, and TDSON-8 package. Verify that alternative components meet or exceed the 10mOhm on-resistance and 50A case current capabilities to ensure equivalent performance in synchronous rectification or motor control roles.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
