BSC106N025S G

Single FETs, MOSFETs Overview

The BSC106N025S G is an OptiMOS™2 N-channel power MOSFET designed for high-performance switching applications. It features a PG-TDSON-8 package with a maximum drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 30 A at 25 °C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 10.6 mΩ at VGS=10 V and 16.7 mΩ at VGS=4.5 V. Key electrical parameters include a gate threshold voltage ranging from 1.2 V to 2 V, total gate charge (Qg) up to 11 nC, and a pulsed drain current capability of 120 A. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of 2.4 K/W via the bottom pad.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically tailored for notebook DC/DC converters and synchronous rectification in SMPS.
• Capable of handling avalanche energy and rated for high dv/dt performance.
• Features excellent gate charge versus on-resistance product (FOM) for efficient switching.
• Qualified according to JEDEC standards for target industrial and consumer applications.

Single FETs, MOSFETs Applications

• Notebook DC/DC converters
• High-performance synchronous rectification in switch-mode power supplies (SMPS)
• General-purpose low-voltage power switching

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the marking code '106N025S' on the PG-TDSON-8 package against official Infineon documentation. Confirm that the part number suffix 'G' corresponds to halogen-free and RoHS compliant specifications as defined in the datasheet. Ensure procurement channels provide valid traceability records for this specific OptiMOS™2 generation device.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage power stages requiring robust avalanche ruggedness and high thermal efficiency. The logic-level gate drive compatibility allows operation with standard control voltages. Consider the 10.6 mΩ RDS(on) limit for conduction loss calculations and verify that the PCB footprint supports the required 6 cm² copper area for optimal thermal dissipation if operating near maximum ratings.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™2 family, which focuses on optimizing the trade-off between switching speed and conduction losses. Unlike later generations such as OptiMOS™3 or OptiMOS™5, this second-generation technology targets cost-sensitive yet high-efficiency applications like portable electronics. The PG-TDSON-8 package provides a compact solution with superior thermal performance compared to traditional leaded packages.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same package and voltage class should be evaluated based on updated RDS(on) and Qg values. Verify that any substitute maintains the 25 V VDS rating and 30 A ID capability. Check if newer OptiMOS™ generations offer improved thermal resistance or lower gate charge for enhanced system efficiency without altering the board layout.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy (EAS) rating?

The device is rated for a single-pulse avalanche energy of 80 mJ under conditions of ID=30 A and RGS=25 Ω.

How does the reverse diode dv/dt rating impact circuit design?

The reverse diode is rated for a dv/dt of 6 kV/µs, allowing it to withstand rapid voltage changes during hard-switching operations without unintended turn-on, which is critical for synchronous rectifier applications.

What are the typical capacitance values at VDS=15 V?

At VDS=15 V and f=1 MHz, the typical input capacitance (Ciss) is 1030 pF, output capacitance (Coss) is 396 pF, and reverse transfer capacitance (Crss) is 52 pF.