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BSC109N10NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 63A TDSON-8-1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC109N10NS3GATMA1
- Description：MOSFET N-CH 100V 63A TDSON-8-1
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：10.9mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC109N10NS3GATMA1
Single FETs, MOSFETs Overview
The BSC109N10NS3GATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 3 series, housed in a PG-TDSON-8 package. It features a drain-source voltage of 100V and a continuous drain current of 63A at case temperature. The device exhibits a maximum on-resistance of 10.9mΩ at 10V gate drive. It supports a junction temperature up to 175°C and includes an integrated body diode.
Single FETs, MOSFETs Feature Summary
- OptiMOS 3 technology for optimized switching performance
- Lead-free packaging compliant with RoHS standards
- Integrated body diode with fast recovery characteristics
- Enhanced thermal dissipation via exposed pad design
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control applications
- Power supply load switches
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the component meets specific automotive or industrial qualification requirements if applicable to the target system. Cross-reference datasheet revisions to ensure compatibility with existing design parameters.
Single FETs, MOSFETs Selection Notes
Select this component when a balance between low on-resistance and compact surface-mount footprint is required. Consider the 100V rating and 63A current capability against the specific circuit load demands. Evaluate thermal management solutions based on the TDSON-8 package's thermal resistance characteristics.
Single FETs, MOSFETs Part Context
This component belongs to Infineon's OptiMOS 3 family, designed for general-purpose power switching. It utilizes silicon technology within a leadless PG-TDSON-8 package to minimize parasitic inductance. The series targets high-efficiency power conversion systems requiring robust performance in small form factors.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other OptiMOS 3 devices with similar voltage and current ratings such as BSC109N10NS3G. Verify pinout compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
