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BSC110N15NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 76A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC110N15NS5ATMA1
- Description：MOSFET N-CH 150V 76A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2770 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC110N15NS5ATMA1
Single FETs, MOSFETs Overview
The BSC110N15NS5ATMA1 is an N-channel OptiMOS 5 power transistor with a 150 V drain-source breakdown voltage. It features a maximum on-resistance of 11 mΩ at VGS=10V and supports a continuous drain current of 76 A at TC=25°C. The device operates within a junction temperature range of -55°C to 150°C, dissipating up to 125 W. Key dynamic parameters include a total gate charge of 28 nC and an output charge of 78 nC. Thermal resistance from junction to case is 0.6 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching and synchronous rectification applications
- Low on-resistance combined with excellent gate charge product for efficient performance
- Qualified according to JEDEC standards for target automotive and industrial applications
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification modules
- Automotive power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status and lead-free plating requirements prior to procurement. Cross-reference the datasheet revision history to validate that all electrical characteristics align with the manufacturing batch date code.
Single FETs, MOSFETs Selection Notes
Select this component when a 150 V rating is required alongside low conduction losses in compact surface-mount designs. Evaluate thermal constraints carefully, as the PG-TDSON-8 package relies heavily on PCB copper area for heat dissipation. Ensure the gate drive voltage meets the threshold requirements for optimal RDS(on) performance under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 5 family, representing advanced silicon technology for power MOSFETs. It utilizes the PG-TDSON-8-U package to provide a small footprint suitable for dense PCB layouts. The series focuses on reducing figure-of-merit values to improve overall system efficiency in power conversion stages.
Single FETs, MOSFETs Replacement Considerations
Check for updated Infineon datasheets regarding potential superseding part numbers or revised marking codes. Verify pinout compatibility if substituting with other 150 V N-channel devices in existing footprints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
