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BSC117N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 49A TDSON. Review the specifications below when checking this part for your BOM.
The BSC117N08NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-state resistance of 11.7 mΩ and supports a continuous drain current of 49 A at 25°C case temperature. The device utilizes a PG-TDSON-8 (SuperSO8) package, providing a thermal resistance from junction to case of 2.5 K/W. Key dynamic parameters include a total gate charge of 15 nC and an output charge of 19 nC.
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the required reel or cut tape packaging format. Ensure compliance with RoHS and halogen-free requirements as defined in the product documentation before integration into final assemblies.
Select this component when designing circuits requiring low conduction losses and fast switching speeds at 80 V. The low gate charge facilitates efficient driver design. Evaluate the thermal management strategy based on the specified junction-to-case resistance to maintain safe operating temperatures during continuous operation.
This part belongs to Infineon's OptiMOS™ 5 family, engineered for enhanced performance in low-voltage power conversion. The technology focuses on minimizing both conduction and switching losses. The specific model integrates advanced cell architecture to deliver high current density within a compact surface-mount footprint suitable for dense PCB layouts.
Direct substitutes within the same series include BSC117N08NS5 without the ATMA1 suffix, provided the packaging configuration aligns with manufacturing requirements. Cross-referencing pinout compatibility and thermal resistance values is essential when considering alternative manufacturers.
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