Single FETs, MOSFETs BSC117N08NS5ATMA1 product image

BSC117N08NS5ATMA1

$1.39
  • Description:MOSFET N-CH 80V 49A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ad10eeb388c0 Category: Brand:

  
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BSC117N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 49A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC117N08NS5ATMA1

  • Description:MOSFET N-CH 80V 49A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:11.7mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:3.8V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 40 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-7
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC117N08NS5ATMA1

BSC117N08NS5ATMA1

Single FETs, MOSFETs Overview

The BSC117N08NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-state resistance of 11.7 mΩ and supports a continuous drain current of 49 A at 25°C case temperature. The device utilizes a PG-TDSON-8 (SuperSO8) package, providing a thermal resistance from junction to case of 2.5 K/W. Key dynamic parameters include a total gate charge of 15 nC and an output charge of 19 nC.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-performance synchronous rectification in switch-mode power supplies
  • Features superior thermal resistance characteristics within the SuperSO8 package
  • Subjected to 100% avalanche testing to ensure robustness under transient conditions

Single FETs, MOSFETs Applications

  • Synchronous rectification in DC/DC converters
  • High-efficiency switch-mode power supply designs
  • General-purpose low-voltage power switching applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the required reel or cut tape packaging format. Ensure compliance with RoHS and halogen-free requirements as defined in the product documentation before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses and fast switching speeds at 80 V. The low gate charge facilitates efficient driver design. Evaluate the thermal management strategy based on the specified junction-to-case resistance to maintain safe operating temperatures during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 5 family, engineered for enhanced performance in low-voltage power conversion. The technology focuses on minimizing both conduction and switching losses. The specific model integrates advanced cell architecture to deliver high current density within a compact surface-mount footprint suitable for dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include BSC117N08NS5 without the ATMA1 suffix, provided the packaging configuration aligns with manufacturing requirements. Cross-referencing pinout compatibility and thermal resistance values is essential when considering alternative manufacturers.

BSC117N08NS5ATMA1BSC117N08NS5ATMA1
$1.39
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