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BSC120N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 12A/39A TDSON. Review the specifications below when checking this part for your BOM.
The BSC120N03LS G is an N-channel enhancement-mode Power-MOSFET from the OptiMOS™ 3 series. It features a PG-TDSON-8 surface-mount package with 8 pins. Key electrical parameters include a drain-source voltage (VDS) of 30 V, a maximum continuous drain current (ID) of 39 A at TC=25°C, and a maximum on-resistance (RDS(on)) of 12 mΩ at VGS=10 V. The device supports a gate-source voltage range of ±20 V, operates within a temperature range of -55 °C to +150 °C, and has a power dissipation rating of 28 W at TC=25°C.
Verify the specific ordering suffix matches the required tape-and-reel configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by IEC61249-2-21 standards. Ensure thermal management solutions align with the junction-to-case thermal resistance values provided in the datasheet for the target operating environment.
Select this component when a low-voltage, high-current solution is required for synchronous rectification or primary-side switching. The logic-level gate threshold simplifies driver design compared to standard threshold devices. Consider the thermal resistance characteristics and package size constraints when evaluating PCB layout options for heat dissipation.
This part belongs to Infineon's OptiMOS™ 3 family, which focuses on optimizing the figure of merit between gate charge and on-resistance. The PG-TDSON-8 package provides a compact footprint suitable for space-constrained consumer electronics and industrial power modules requiring efficient thermal performance.
Cross-reference with other OptiMOS 3 variants such as BSC020N03LS G or BSC030N03LS G for different current ratings within the same voltage class. Verify pinout compatibility and thermal resistance specifications before substituting.
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