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BSC123N10LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 10.6/71A 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC123N10LSGATMA1
- Description：MOSFET N-CH 100V 10.6/71A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4900 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC123N10LSGATMA1
Single FETs, MOSFETs Overview
The BSC123N10LSGATMA1 is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 2 technology. It features a 100 V drain-source voltage rating and a continuous drain current of 71 A. The device offers a maximum on-resistance of 12.3 mΩ at 10 V gate drive. Packaged in a TDSON-8 surface-mount case, it supports operating junction temperatures up to 150 °C.
Single FETs, MOSFETs Feature Summary
- OptiMOS 2 technology for optimized switching performance
- Low on-resistance for high efficiency
- Surface-mount TDSON-8 package design
Single FETs, MOSFETs Applications
- Power supply circuits
- Motor control applications
- General power switching tasks
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix GATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact OptiMOS 2 generation and thermal characteristics required by the target circuit design before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and 71 A continuous current capability are required in a compact TDSON-8 footprint. Consider the 12.3 mΩ on-resistance for conduction loss calculations and verify that the thermal management solution accommodates the package's dissipation limits under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the BSC series of N-channel MOSFETs manufactured by Infineon Technologies. It utilizes the OptiMOS 2 process technology, which is designed to provide low on-resistance and fast switching speeds within a small surface-mount package suitable for modern electronic assemblies.
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