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BSC130P03LSGAUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 12A/22.5A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC130P03LSGAUMA1
- Description：MOSFET P-CH 30V 12A/22.5A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 22.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs：73.1 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：3670 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-3
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for BSC130P03LSGAUMA1
Single FETs, MOSFETs Overview
The BSC130P03LSGAUMA1 is a P-Channel OptiMOS-P power transistor in a PG-TDSON-8 package. It features a drain-source voltage of -30 V and a continuous drain current of -22.5 A at Tc=25°C. The maximum on-state resistance is 13 mΩ at Vgs=-10 V. Gate-source voltage limits are ±25 V, with an operating temperature range from -55°C to +150°C. Power dissipation reaches 2.5 W at Tc=25°C. Avalanche energy capability is rated at 22.5 mJ.
Single FETs, MOSFETs Feature Summary
- Logic-level enhancement mode operation for direct interface compatibility
- Avalanche-rated construction supporting robust transient handling
- Halogen-free composition adhering to IEC61249-2-21 standards
Single FETs, MOSFETs Applications
- Notebook power management circuits
- Low-side switching applications
- General-purpose power control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix GAUMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status matches current regulatory requirements before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low on-resistance within a compact surface-mount footprint. Evaluate thermal performance based on the specified junction-to-case resistance. Consider avalanche energy ratings when designing for inductive load switching scenarios or potential voltage spike conditions.
Single FETs, MOSFETs Part Context
This device belongs to the OptiMOS-P family, utilizing advanced planar technology for optimized performance. The TDSON-8 package provides efficient thermal dissipation capabilities relative to its physical size. It represents a specialized solution for portable electronics where space constraints and efficiency are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
Cross-reference pinouts and electrical characteristics carefully. Verify that substitute components meet the same -30 V rating and current handling requirements. Ensure compatible gate threshold voltages for existing driver circuitry.
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