BSC146N10LS5ATMA1

$0.88

Description：MOSFET N-CH 100V 44A TDSON-8-6
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5163ab22a765 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSC146N10LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 44A TDSON-8-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC146N10LS5ATMA1

Description：MOSFET N-CH 100V 44A TDSON-8-6
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC146N10LS5ATMA1

BSC146N10LS5ATMA1

Single FETs, MOSFETs Overview

The BSC146N10LS5 is a single N-channel OptiMOS™ 5 power transistor with a 100 V drain-source breakdown voltage. It features a maximum on-state resistance of 14.6 mΩ at VGS=10 V and supports a continuous drain current of 44 A at TC=25 °C. The device utilizes a PG-TDSON-8 package, providing superior thermal resistance with a junction-to-case value of 1.4 °C/W. Key dynamic parameters include a total gate charge of 7.6 nC (0V to 4.5 V) and an output charge of 20 nC.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance synchronous rectification in switching mode power supplies.
Features logic-level gate drive capability for efficient control.
Includes 100% avalanche testing for enhanced ruggedness.

Single FETs, MOSFETs Applications

Synchronous rectifiers in DC/DC converters
High-efficiency switching mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct component identification. Confirm that the required package variant matches the PG-TDSON-8 specification. Ensure compliance with industrial application qualification standards as defined in the product validation section before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-state resistance and high current handling are required within a compact surface-mount footprint. The logic-level gate threshold allows for direct drive from standard logic controllers. Consider the thermal characteristics and PCB cooling area requirements to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for advanced power management applications. It represents a generation of silicon MOSFETs optimized for efficiency and thermal performance in industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for verified substitutes. Cross-reference pinouts and electrical ratings carefully if considering alternative manufacturers or older generations.