BSC150N03LD

Overview

The BSC150N03LD G is a dual N-channel logic level MOSFET from the OptiMOS™3 family, housed in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 20 A at 25 °C case temperature. The maximum on-resistance is 15 mΩ at VGS=10 V and 22 mΩ at VGS=4.5 V. Total gate charge is typically 6.4 nC at VGS=10 V. Thermal resistance junction-to-case is 4.9 K/W via the bottom pad. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration for synchronous rectification
• Optimized technology for DC/DC converters and SMPS applications
• Superior thermal resistance with low RthJC
• Qualified according to JEDEC standards

Applications

• Synchronous rectification in DC/DC converters
• Switching power supplies (SMPS)
• Low voltage power management circuits

Procurement Notes

Verify the component marking '150N03LD' against the datasheet to confirm authenticity. Ensure the package matches the PG-TDSON-8 outline dimensions. Check for RoHS compliance and halogen-free status as specified in the product summary. Confirm that the supplier provides valid traceability documentation for the manufacturing lot.

Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage applications. The logic-level gate drive capability allows operation with standard control voltages. Consider the thermal resistance values for heat dissipation requirements in confined spaces. Evaluate the gate charge characteristics for switching frequency optimization in power conversion designs.

Part Context

This device belongs to Infineon's OptiMOS™3 series, designed for high efficiency in power electronics. The dual configuration integrates two independent N-channel transistors within a single small footprint. This integration reduces board space compared to discrete single-channel alternatives while maintaining robust electrical performance for modern power supply architectures.

Replacement Considerations

Direct replacements must match the PG-TDSON-8 package and dual N-channel topology. Verify that substitute parts meet or exceed the 30 V breakdown voltage and 20 A current rating. Ensure equivalent thermal resistance and gate charge specifications to maintain circuit performance without redesign.

FAQ

What is the maximum continuous drain current at 25 °C?

The maximum continuous drain current is 20 A at a case temperature of 25 °C.

Is the device qualified for specific industry standards?

Yes, the device is qualified according to JEDEC standards for target applications.

What is the typical avalanche energy rating?

The single pulse avalanche energy is rated at 80 mJ under conditions of ID=20 A and RGS=25 Ω.