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BSC152N15LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC152N15LS5ATMA1
- Description：TRENCH >=100V
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15.2mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC152N15LS5ATMA1
Single FETs, MOSFETs Overview
The BSC152N15LS5 is an N-channel OptiMOS™ 5 power transistor with a 150 V drain-source breakdown voltage. It features a maximum on-resistance of 15.2 mΩ at VGS=10V and supports a continuous drain current of 55 A at TC=25°C. The device utilizes a PG-TDSON-8 package, providing superior thermal resistance with a junction-to-case value of 1.3 °C/W. Key dynamic parameters include a total gate charge of 23 nC (0V to 10V) and an output charge of 54 nC.
Single FETs, MOSFETs Feature Summary
- Logic-level operation optimized for low gate drive requirements
- Superior thermal performance via bottom-side cooling in the TDSON-8 package
- 100% avalanche tested for robustness against transient energy events
Single FETs, MOSFETs Applications
- Industrial motor control systems
- DC-DC converter topologies
- Power supply modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code BSC152N15LS5 against the manufacturer's latest documentation to ensure correct revision status. Confirm that the PG-TDSON-8 footprint matches your PCB design guidelines. Check for any RoHS or REACH compliance updates relevant to your region before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 150 V rating is required alongside high efficiency in a compact surface-mount form factor. The low RDS(on) minimizes conduction losses, while the logic-level threshold simplifies driver interface design. Ensure adequate copper area on the PCB to utilize the specified thermal resistance values effectively.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™ 5 family, designed for industrial applications. It represents a silicon-based enhancement mode MOSFET technology. The product is fully qualified according to JEDEC standards for industrial environments, ensuring reliability under varying thermal conditions.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for direct equivalents. Verify pinout compatibility and thermal characteristics if substituting with other 150 V TDSON-8 devices.
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