BSC340N08NS3GATMA1

Single FETs, MOSFETs Overview

The BSC340N08NS3GATMA1 is a single N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 3 product family. It utilizes silicon technology and is housed in a TSDSON-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 80 V and supports a continuous drain current (Id) of 23 A at 25°C. Its maximum on-resistance (Rds(on)) is specified at 34 mΩ. The gate-source voltage limits range from -20 V to +20 V, with a typical threshold voltage of 2 V. Total power dissipation reaches 32 W, and the component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides optimized performance for low-voltage switching applications.
• TSDSON-8 package design facilitates efficient thermal management and compact PCB integration.
• Enhanced ruggedness ensures reliable operation under standard automotive and industrial conditions.

Single FETs, MOSFETs Applications

• Synchronous rectification in DC/DC converters
• Low-side switching in motor control circuits
• Power management modules for telecommunications infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering part number, including suffixes such as ATMA1, against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm that the requested quantity aligns with manufacturer minimum order requirements and reel sizes. Cross-reference the specific datasheet revision date to validate parameter accuracy before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V rating and approximately 34 mΩ on-resistance are required in a compact SMD footprint. The 23 A current capability suits moderate-power synchronous rectification tasks. Ensure the application environment remains within the -55°C to +150°C operating range and that gate drive voltages do not exceed the ±20 V absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 series, representing a generation of silicon power MOSFETs designed for cost-effective efficiency. It shares the TSDSON-8 form factor with other devices in the lineup but differs in electrical characteristics based on its specific Rds(on) and current ratings. It serves as a discrete solution for general-purpose power switching where high-frequency performance is secondary to conduction losses.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible substitutes within the same package may include other OptiMOS 3 variants with similar voltage and resistance ratings, provided their current capabilities meet or exceed the 23 A requirement. Verify thermal resistance parameters to ensure equivalent heat dissipation performance in the target application.