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BSC360N15NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 33A 8TDSON. Review the specifications below when checking this part for your BOM.
The BSC360N15NS3GATMA1 is a single N-channel Power-Transistor from the OptiMOS 3 family, housed in a PG-TDSON-8 package. It features a drain-source breakdown voltage of 150 V and a continuous drain current of 33 A at 25 °C. The device exhibits a maximum on-state resistance of 4.9 mΩ at 10 V gate drive. Thermal performance includes a junction-to-case thermal resistance of 1.7 K/W and a power dissipation capacity of 60 W.
Verify the specific ordering suffix to confirm tape-and-reel packaging quantities and ensure the component matches the required automotive or industrial qualification standards. Confirm that the PG-TDSON-8 footprint aligns with the target PCB design before finalizing procurement orders.
Select this component when a balance between low conduction losses and robust thermal handling is required in compact designs. The 150 V rating suits intermediate voltage levels, while the 4.9 mΩ resistance minimizes heat generation under load compared to higher resistance alternatives.
This part belongs to Infineon's OptiMOS 3 series, designed for general-purpose power switching. It utilizes silicon technology within a surface-mount package suitable for automated assembly processes in consumer and industrial electronics manufacturing.
BSZ900N15NS3GATMA1
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