Single FETs, MOSFETs BSC360N15NS3GATMA1 product image

BSC360N15NS3GATMA1

$2.03
  • Description:MOSFET N-CH 150V 33A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9e3d833192f1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BSC360N15NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 33A 8TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC360N15NS3GATMA1

  • Description:MOSFET N-CH 150V 33A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:36mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):74W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-1
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC360N15NS3GATMA1

BSC360N15NS3GATMA1

Single FETs, MOSFETs Overview

The BSC360N15NS3GATMA1 is a single N-channel Power-Transistor from the OptiMOS 3 family, housed in a PG-TDSON-8 package. It features a drain-source breakdown voltage of 150 V and a continuous drain current of 33 A at 25 °C. The device exhibits a maximum on-state resistance of 4.9 mΩ at 10 V gate drive. Thermal performance includes a junction-to-case thermal resistance of 1.7 K/W and a power dissipation capacity of 60 W.

Single FETs, MOSFETs Feature Summary

  • Optimized low on-resistance for high efficiency
  • Enhanced avalanche ruggedness
  • Lead-free plastic packaging with RoHS compliance

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control applications
  • High-side switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm tape-and-reel packaging quantities and ensure the component matches the required automotive or industrial qualification standards. Confirm that the PG-TDSON-8 footprint aligns with the target PCB design before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a balance between low conduction losses and robust thermal handling is required in compact designs. The 150 V rating suits intermediate voltage levels, while the 4.9 mΩ resistance minimizes heat generation under load compared to higher resistance alternatives.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 3 series, designed for general-purpose power switching. It utilizes silicon technology within a surface-mount package suitable for automated assembly processes in consumer and industrial electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

BSZ900N15NS3GATMA1

BSC360N15NS3GATMA1BSC360N15NS3GATMA1
$2.03
Buy Now