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BSC882N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 8TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC882N03LSGATMA1
- Description：MOSFET N-CH 34V 8TDSON
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：34 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC882N03LSGATMA1
Single FETs, MOSFETs Overview
The BSC882N03LSGATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 M-Series. It features a TDSON-8 surface-mount package and operates with a drain-source voltage (Vds) of 34 V. The device supports a continuous drain current (Id) of up to 80 A and exhibits a low on-resistance (Rds(on)) of 5 mΩ. It utilizes silicon technology and enhancement mode operation, with a gate-source voltage range of ±20 V. The component is rated for a maximum junction temperature of +150 °C and offers a power dissipation capability of 50 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS 3 M-Series technology for optimized performance
- Low on-resistance for efficient power switching
- TDSON-8 surface-mount package design
Single FETs, MOSFETs Applications
- Power management systems
- High-performance switching applications
- Efficient power conversion circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer datasheet for the most accurate electrical characteristics and thermal parameters. Confirm that the TDSON-8 package dimensions align with your PCB footprint requirements. Ensure that the 34 V rating and 80 A current capacity meet your circuit's operational demands under all expected load conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel MOSFET with high current handling is required in a compact surface-mount form factor. The OptiMOS 3 M-Series offers a balance of low conduction losses and reliable switching performance suitable for demanding power electronics designs.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS 3 M-Series, which focuses on delivering high efficiency in power switching applications. The series is known for its advanced silicon technology, providing improved thermal performance and lower on-resistance compared to standard MOSFETs in similar packages.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Cross-referencing should be limited to components explicitly listed as equivalents by the manufacturer.
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