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BSC883N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 17A/98A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC883N03LSGATMA1
- Description：MOSFET N-CH 34V 17A/98A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：34 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 57W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC883N03LSGATMA1
Single FETs, MOSFETs Overview
The BSC883N03LSGATMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 34 V drain-source voltage rating and a continuous drain current of 100 A. The device offers a low on-resistance of 1.4 mΩ at a gate-source voltage of 10 V. Packaged in a PG-TDSON-8 surface-mount case, it supports operation within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology for optimized performance
- Low on-resistance for efficient conduction
- Logic-level gate drive capability
Single FETs, MOSFETs Applications
- Power distribution systems
- Motor control applications
- DC-DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific part number against official manufacturer documentation to confirm electrical parameters and package details. Ensure compatibility with design requirements regarding voltage ratings and thermal management. Check for any lifecycle status updates or recommended alternative components before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component based on its high current handling capacity and low on-resistance characteristics suitable for efficient power switching. Consider the PG-TDSON-8 package for space-constrained designs requiring robust thermal performance. Evaluate gate drive requirements to leverage the logic-level functionality effectively.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS family of power transistors designed by Infineon Technologies. These devices are engineered for high efficiency and reliability in various power electronics applications. The specific model integrates advanced trench technology to minimize losses while maintaining compact form factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Cross-reference specifications such as voltage, current, and resistance when evaluating alternatives.
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