BSC883N03MSG

$0.39

Description：N-CHANNEL POWER MOSFET
Series：OptiMOS™ 3M
Mfr：Infineon Technologies
Package：Bulk

SKU:e222360e40af Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSC883N03MSG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC883N03MSG

Description：N-CHANNEL POWER MOSFET
Series：OptiMOS™ 3M
Mfr：Infineon Technologies
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：19A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC883N03MSG

BSC883N03MSG

Single FETs, MOSFETs Overview

The BSC883N03MSG is a single N-channel Power-MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 34 V drain-source voltage and supports continuous currents of 19 A at ambient temperature and 98 A at case temperature. The device offers a low on-resistance of 2.5 mΩ, with power dissipation ratings of 2.5 W (Ta) and 57 W (Tc). Packaged in a surface-mount PG-TDSON-8 format, it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

OptiMOS technology integration for optimized performance
Low thermal resistance design supporting high current densities
Enhancement mode operation for efficient switching

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control applications
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and marking code against official Infineon documentation to ensure component authenticity. Confirm that the PG-TDSON-8 package matches your PCB footprint requirements. Check for any RoHS or REACH compliance declarations relevant to your region. Ensure the sourcing channel provides valid traceability records for quality assurance purposes.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with high surge current capability is required. The TDSON-8 package suits space-constrained designs needing robust thermal performance. Compare the 2.5 mΩ on-resistance against load requirements to ensure efficiency targets are met. Consider the 34 V rating for standard 24 V system architectures.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power transistors designed for automotive and industrial applications. It represents Infineon's silicon-based solution for low-voltage switching tasks. The PG-TDSON-8 package provides a balance between electrical performance and thermal management in a small form factor.