BSC884N03MSG

$0.39

Description：N-CHANNEL POWER MOSFET
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Bulk

SKU:dcac5d40f3db Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC884N03MSG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC884N03MSG

Description：N-CHANNEL POWER MOSFET
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC884N03MSG

BSC884N03MSG

Single FETs, MOSFETs Overview

The BSC884N03MSG is a single N-channel power MOSFET manufactured by Infineon Technologies, utilizing silicon technology and housed in a TDSON-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 17 A. The device exhibits a maximum on-state resistance of 4.5 mOhms at standard test conditions. Gate-source voltage limits are defined between -20 V and +20 V. Thermal performance includes a maximum power dissipation of 2.5 W and an operating temperature range from -55 °C to +150 °C. Switching characteristics include a typical turn-on delay of 16 ns, rise time of 6.8 ns, fall time of 7.2 ns, and total gate charge of 13 nC.

Single FETs, MOSFETs Feature Summary

Enhancement-mode N-channel configuration for efficient switching control
Low on-state resistance optimized for conduction loss reduction
Integrated thermal management capabilities within the TDSON-8 footprint

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor driver stages
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during soldering processes.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance parameters against system heat dissipation constraints. Compare on-state resistance values with alternative components to optimize efficiency targets. Verify gate charge specifications against driver capability to ensure adequate switching speeds without excessive drive losses.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS family of power transistors designed for high-efficiency switching applications. The TDSON-8 package provides a compact solution suitable for space-constrained designs while maintaining robust electrical performance standards required for modern electronic systems.