ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC889N03MSG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC889N03MSG
- Description：N-CHANNEL POWER MOSFET
- Series：OptiMOS™ 3
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC889N03MSG
Single FETs, MOSFETs Overview
The BSC889N03MSG is a single N-Channel Power-MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30V drain-source voltage rating and operates in an enhancement mode. The device supports a continuous drain current of 12A at ambient temperature and 44A at case temperature. It is housed in a surface-mount PG-TSDSON-8 package. Thermal performance includes power dissipation ratings of 2.5W at ambient and 28W at case temperatures.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology integration for optimized switching performance
- Single-channel N-Configuration with low gate charge characteristics
- Surface-mount PG-TSDSON-8 packaging for compact board layouts
Single FETs, MOSFETs Applications
- Low-side switching applications in automotive electronics
- General-purpose power switching circuits
- DC-DC converter output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'G' against official Infineon documentation to confirm RoHS compliance status. Confirm that the PG-TSDSON-8 package dimensions match your PCB footprint requirements. Check for any recent lifecycle notices regarding this specific part number to ensure long-term availability for production.
Single FETs, MOSFETs Selection Notes
Select this component when a 30V N-Channel MOSFET is required in a TDSON-8 form factor. Ensure thermal management strategies account for the 2.5W ambient dissipation limit if heatsinking is not utilized. Compare gate charge specifications against driver capabilities to optimize switching speed and minimize losses.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family, designed for efficient power control. It complements other low-voltage MOSFETs in the portfolio by offering a balance between current handling and package size. The technology focuses on reducing conduction and switching losses for cost-effective designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and thermal resistance values before replacing with similar packages from other manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
