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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.95A SOT363
- Series：OptiMOS™ 2
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：950mA
- Rds On (Max) @ Id, Vgs：350mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs：0.32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：63pF @ 10V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BSD235N L6327 is a dual N-channel enhancement mode MOSFET from Infineon Technologies, housed in a PG-SOT-363 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 0.95 A at 25 °C. The device supports Super Logic Level operation with a maximum on-state resistance of 350 mΩ at VGS=4.5 V and 600 mΩ at VGS=2.5 V. It is avalanche rated with single pulse energy of 1.6 mJ and reverse diode dv/dt capability of 6 kV/µs. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Super Logic Level compatibility for low-voltage drive applications
- Avalanche rated design for robust transient handling
- High reverse diode dv/dt rating for fast switching environments
Applications
- Mobile Robot (IMR) battery management systems
- General purpose small-signal switching
- Low voltage logic level interface circuits
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm RoHS compliance and halogen-free status against project specifications. Ensure the component meets AEC-Q101 qualification requirements if automotive or high-reliability industrial standards are mandated. Cross-reference datasheet revision numbers during final validation.
Selection Notes
Select this component when dual N-channel isolation is required within a minimal footprint. The Super Logic Level feature makes it suitable for 2.5 V driven systems where standard logic levels are insufficient. Consider the thermal resistance characteristics and safe operating area limits for power dissipation constraints in dense PCB layouts.
Part Context
This part belongs to the BSD235 series of OptiMOS™2 small-signal transistors. It serves as a successor or variant to earlier versions like the BSD235N L6327, maintaining the SOT-363 form factor while offering optimized electrical parameters for modern low-power consumer and industrial electronics.
Replacement Considerations
Direct substitutes include BSD235NH6327XTSA1 and BSD235CH6327XTSA1. Verify pinout compatibility and electrical parameter margins before substitution. Ensure the replacement maintains the same package type and qualification standards.
