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BSD314SPEH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 1.5A SOT363-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSD314SPEH6327XTSA1
- Description：MOSFET P-CH 30V 1.5A SOT363-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：140mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：294 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT363-6
- Package / Case：6-VSSOP, SC-88, SOT-363
Single FETs, MOSFETs datasheet and documents for BSD314SPEH6327XTSA1
Single FETs, MOSFETs Overview
The BSD314SPEH6327XTSA1 is a P-channel OptiMOS-P 3 small-signal transistor in a PG-SOT-363 package. It features a drain-source breakdown voltage of -30 V and a continuous drain current of -1.5 A at 25 °C. The device has a maximum on-state resistance of 140 mΩ at VGS=-10 V and 230 mΩ at VGS=-4.5 V. Gate threshold voltage ranges from -1 V to -2 V, with a typical gate charge of 2.9 nC. It operates within a temperature range of -55 °C to +150 °C and includes ESD protection rated up to 2000 V HBM.
Single FETs, MOSFETs Feature Summary
- Logic level operation rated for 4.5 V gate drive
- Integrated electrostatic discharge (ESD) protection
- Qualified according to AEC-Q101 standards
Single FETs, MOSFETs Applications
- Small-signal switching applications
- Automotive electronic circuits
- Low-side or high-side load switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm reel quantity and packing format. Ensure the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Cross-reference the full part number with authorized distributors to confirm availability and authenticity before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-channel MOSFET with a -30 V rating and logic-level compatibility. Consider the thermal resistance and power dissipation limits when designing for ambient temperatures above 25 °C. Verify that the required gate drive voltage aligns with the 4.5 V or 10 V specifications for optimal on-state resistance performance.
Single FETs, MOSFETs Part Context
This component belongs to the BSD314 series of OptiMOS-P 3 small-signal transistors manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount PG-SOT-363 package. The series is designed for efficient switching with low on-resistance and robust avalanche characteristics suitable for demanding environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters and package dimensions.
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