BSD316SNH6327XTSA1

$0.26

Description：MOSFET N-CH 30V 1.4A SOT363-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1eff20c3affe Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSD316SNH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 1.4A SOT363-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSD316SNH6327XTSA1

Description：MOSFET N-CH 30V 1.4A SOT363-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id：2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：94 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT363-PO
Package / Case：6-VSSOP, SC-88, SOT-363

Single FETs, MOSFETs datasheet and documents for BSD316SNH6327XTSA1

BSD316SNH6327XTSA1

Single FETs, MOSFETs Overview

The BSD316SNH6327XTSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™2 series, housed in a PG-SOT363 surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 1.4 A at 25 °C. The device has a typical on-state resistance of 192 mΩ at VGS=4.5 V and 120 mΩ at VGS=10 V. It supports a maximum power dissipation of 0.5 W, operates within a temperature range of -55 °C to 150 °C, and includes avalanche energy ratings.

Single FETs, MOSFETs Feature Summary

Logic-level gate threshold optimized for direct drive from standard logic circuits.
Avalanche-rated capability for handling transient energy events.
High reverse diode dv/dt rating suitable for fast-switching applications.

Single FETs, MOSFETs Applications

Low-side switching in automotive electronic control units
Load switching in industrial equipment
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the component against official Infineon documentation to confirm the specific marking code (X7s) and tape-and-reel quantity (3000 pcs). Ensure that the ordering suffix H6327 matches the required packaging format. Cross-reference the datasheet revision to validate all electrical parameters before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SMD solution with low on-resistance is required for 30 V systems. The logic-level gate threshold allows compatibility with 3.3 V or 5 V control signals. Consider the thermal resistance characteristics and package size constraints during PCB layout design to ensure adequate heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the BSD316 family of small-signal transistors manufactured by Infineon Technologies. It utilizes silicon technology and is designed for general-purpose switching applications. The component is qualified according to AEC-Q101 standards, indicating its suitability for automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the PG-SOT363-6 package, 30 V VDS rating, and similar RDS(on) characteristics. Verify pinout compatibility and thermal performance before substituting with other manufacturers' parts.