BSD316SNL6327XT

$0.19

Description：MOSFET N-CH 30V 1.4A SOT363-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f5018d1c9bea Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSD316SNL6327XT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 1.4A SOT363-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSD316SNL6327XT

Description：MOSFET N-CH 30V 1.4A SOT363-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id：2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：94 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT363-PO
Package / Case：6-VSSOP, SC-88, SOT-363

Single FETs, MOSFETs datasheet and documents for BSD316SNL6327XT

BSD316SNL6327XT

Single FETs, MOSFETs Overview

The BSD316SNL6327XT is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 1.4 A at 25 °C. The device utilizes a PG-SOT363-6 surface-mount package with a maximum power dissipation of 500 mW. Key electrical characteristics include a low on-resistance of 160 mΩ at 10 V gate drive, a gate-source voltage rating of ±20 V, and a gate charge of 600 pC. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Single N-channel configuration for discrete switching applications
Low on-resistance optimized for efficient power handling
Automotive-grade qualification compliant with AEC-Q101 standards

Single FETs, MOSFETs Applications

Automotive load switching circuits
General-purpose high-side or low-side switching
Power management in automotive electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L6327XT against official Infineon documentation to confirm tape-and-reel packaging details. Confirm that the component meets AEC-Q101 automotive reliability requirements if used in qualified systems. Check datasheet revisions for any updates to thermal resistance or pinout configurations before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with 30 V capability and 1.4 A current handling is required in a compact SOT-363-6 package. Ensure the application voltage does not exceed the 20 V gate-source limit. Consider the 160 mΩ on-resistance for thermal management calculations in low-power switching environments.

Single FETs, MOSFETs Part Context

This part belongs to the BSD316 series of small-signal MOSFETs from Infineon Technologies. The series is designed for automotive and general-purpose applications requiring reliable switching performance in space-constrained designs. The BSD316SN variant specifically offers single-channel N-type functionality within the standardized SOT-363-6 footprint.