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The BSD340NH6327XTSA1 is a dual N-channel OptiMOS2 small-signal transistor in a SOT-363-6 package. It features a drain-source voltage of 30 V, continuous drain current of 0.88 A at 25°C, and maximum on-resistance of 600 mΩ at VGS=4.5V. The device supports pulsed currents up to 3.5 A, operates between -55°C and 150°C, and has a power dissipation of 0.5 W.
Verify the component against the official Infineon datasheet revision 2.0 dated June 23, 2016. Confirm that the ordering code matches BSD340N and the marking corresponds to XGs. Ensure compliance with RoHS and halogen-free requirements as specified in the documentation.
Select this component for designs requiring dual N-channel switching within a compact SOT-363-6 footprint. It is suitable for automotive environments due to its AEC-Q101 qualification. Consider the 600 mΩ on-resistance at 4.5V logic levels when evaluating efficiency requirements.
This part belongs to the OptiMOS2 family of small-signal transistors designed by Infineon Technologies. It utilizes silicon technology and is housed in the PG-SOT363 package. The series is engineered for high reliability and low power consumption in modern electronic applications.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other MOSFET families without explicit manufacturer confirmation.