BSD816SNH6327XTSA1

Single FETs, MOSFETs Overview

The BSD816SNH6327XTSA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS™2 series, housed in a PG-SOT363 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 1.4 A at 25 °C. The device supports ultra-low logic level operation with a maximum on-state resistance of 240 mΩ at VGS=1.8 V and 160 mΩ at VGS=2.5 V. It is avalanche rated with single-pulse energy capability of 3.7 mJ and complies with AEC-Q101 standards for automotive applications.

Single FETs, MOSFETs Feature Summary

• OptiMOS™2 technology optimized for low gate charge and fast switching performance
• Avalanche-rated design capable of handling repetitive avalanche energy
• Ultra Logic level compatibility enabling direct drive from 1.8 V logic sources
• Automotive-grade qualification ensuring reliability under harsh environmental conditions

Single FETs, MOSFETs Applications

• Low-side switching in automotive electronic control units
• Load switching for 12 V DC-DC converters
• General-purpose power management in compact consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code matches the required suffix to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific automotive quality requirements if intended for life-support or critical systems. Cross-reference the datasheet revision to ensure all electrical characteristics align with current manufacturing standards before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a small-footprint N-channel MOSFET is required for low-voltage logic-level switching applications. The PG-SOT363 package offers space efficiency compared to standard SOT-23 variants while maintaining robust thermal performance. Ensure the operating voltage remains within the 20 V limit and consider the thermal derating curves for high ambient temperature environments.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™2 family, which focuses on optimizing the trade-off between on-resistance and gate charge for small-signal applications. The BSD816SN variant specifically targets automotive and industrial markets requiring AEC-Q101 compliance. It serves as a compact solution for replacing larger discrete transistors in modern miniaturized circuit designs.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the PG-SOT363 footprint and maintain similar VDS and ID ratings. Verify that substitute components also support 1.8 V logic levels and possess comparable avalanche energy ratings to ensure circuit reliability is not compromised during migration.