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BSD816SNL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 1.4A SOT363-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSD816SNL6327HTSA1
- Description：MOSFET N-CH 20V 1.4A SOT363-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
- Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id：950mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 2.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT363-PO
- Package / Case：6-VSSOP, SC-88, SOT-363
Single FETs, MOSFETs datasheet and documents for BSD816SNL6327HTSA1
Single FETs, MOSFETs Overview
The BSD816SNL6327HTSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™2 series, housed in a PG-SOT363 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 1.4 A at 25 °C. The device supports ultra-low logic level operation with a gate threshold voltage as low as 0.3 V and on-state resistance of 240 mΩ at 1.8 V. It is avalanche rated with single-pulse energy capability of 3.7 mJ and complies with AEC-Q101 standards for automotive applications.
Single FETs, MOSFETs Feature Summary
- Ultra Logic level operation enabling direct drive from 1.8 V logic sources
- Avalanche rated design supporting robust transient handling
- Qualified according to AEC-Q101 for automotive reliability
Single FETs, MOSFETs Applications
- Automotive power management circuits
- Low-voltage load switching applications
- Logic-level interface circuits requiring 1.8 V drive compatibility
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm tape and reel specifications. Ensure component authenticity through authorized distribution channels. Confirm that the PG-SOT363 package dimensions align with target PCB footprint requirements before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring 20 V N-channel switching driven by 1.8 V logic signals. The low gate threshold voltage facilitates efficient control in battery-powered systems. Consider the thermal resistance characteristics and safe operating area limits for high-current pulsed applications to ensure reliable operation within specified temperature ranges.
Single FETs, MOSFETs Part Context
This part belongs to the BSD816N family of small-signal transistors utilizing Infineon's OptiMOS™2 technology. The family focuses on low on-resistance and fast switching speeds suitable for compact power management designs. The BSD816SN variant specifically targets applications needing enhanced ruggedness through avalanche rating capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Cross-reference pinout configurations and electrical parameters such as RDS(on) and VGS(th) to ensure functional equivalence in existing circuit layouts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
