ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.88A SOT363
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：880mA
- Rds On (Max) @ Id, Vgs：400mOhm @ 880mA, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs：0.26nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds：78pF @ 10V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
Download product information
Overview
The BSD840NH6327XTSA1 is a dual N-channel OptiMOS™2 small-signal MOSFET in a PG-SOT-363 package. It features an ultra logic level rated for 1.8V operation, with a maximum drain-source voltage of 20V and continuous drain current of 0.88A at 25°C. The device has a typical gate threshold voltage of 0.55V and on-state resistance of 270mΩ at VGS=2.5V. It supports pulsed currents up to 3.5A, operates between -55°C and +150°C, and includes avalanche rating capabilities.
Feature Summary
- Dual N-channel configuration within a compact SOT-363 package
- Ultra Logic level capability optimized for low-voltage switching applications
- Avalanche rated for robustness against transient energy events
- Qualified according to AEC-Q101 automotive standards
Applications
- Low-voltage signal switching circuits
- Automotive electronic control units
- Battery management systems
- Logic level translation interfaces
Procurement Notes
Verify the component matches the exact part number BSD840NH6327XTSA1. Confirm the package type is PG-SOT-363 and that it meets AEC-Q101 qualification requirements. Ensure the datasheet revision aligns with the specified electrical characteristics before integration into designs.
Selection Notes
Select this component for applications requiring dual N-channel switching in a minimal footprint. Its 1.8V logic level compatibility makes it suitable for low-power microcontroller interfaces. Consider its thermal resistance and power dissipation limits when designing for high ambient temperatures or dense PCB layouts.
Part Context
This part belongs to Infineon's OptiMOS™2 family, designed for small-signal applications. It offers enhanced performance over standard MOSFETs with improved switching speeds and lower on-resistance. The dual configuration allows for efficient implementation of bridge or push-pull circuits in space-constrained environments.
Replacement Considerations
Direct replacements must match the dual N-channel configuration, 20V rating, and SOT-363 package. Verify equivalent electrical parameters such as RDS(on) and VGS(th). Ensure any substitute also meets AEC-Q101 if automotive qualification is required.
