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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 1200V 5A TO252
- Series：-
- Mfr：Bourns Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：5A
- Voltage - Forward (Vf) (Max) @ If：1.6 V @ 5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Capacitance @ Vr, F：260pF @ 1V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Bourns BSDD05G120E2 is a Silicon Carbide Schottky diode housed in a TO252 (DPAK) package. It features a repetitive peak reverse voltage of 1200 V and an average forward current rating of 5 A. The device supports a non-repetitive peak forward surge current of 45 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.5 V at 175 °C, low reverse leakage current, and minimal recovered charge.
Feature Summary
- High efficiency with low power loss
- Low reverse leakage current
- High peak forward surge current capability
- Reduced electromagnetic interference
Applications
- Switched-Mode Power Supplies
- Power Factor Correction
- PV inverters
- DC-DC converters
- Telecommunications
Procurement Notes
Verify the specific part number against official Bourns documentation to ensure compliance with RoHS and halogen-free requirements. Confirm that the TO252 package dimensions match your PCB footprint design. Check for any updates to electrical parameters or thermal resistance values before finalizing procurement specifications.
Selection Notes
Select this component for high-frequency applications requiring low thermal resistance and high surge current handling. Ensure the mounting base temperature does not exceed 157 °C during operation. Consider the forward voltage drop variations across the operating temperature range when designing thermal management solutions.
Part Context
This silicon carbide Schottky diode belongs to Bourns' advanced power component lineup designed for rectification applications. It offers excellent current carrying capacity and reduced thermal resistance compared to traditional silicon devices, making it suitable for compact, high-efficiency power conversion systems.
Replacement Considerations
Consult official Bourns documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying absolute maximum ratings and electrical characteristics.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
Is the device compliant with environmental standards?
Yes, the device is RoHS compliant and halogen free.
