BSDV10G120E2

$5.60

Description：DIODE SIL CARB 1200V 10A TO247
Series：-
Mfr：Bourns Inc.
Package：Tube

SKU:12e58c6dfef7 Category: Single Diodes Brand: Bourns Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1200V 10A TO247
Series：-
Mfr：Bourns Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.6 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 1200 V
Capacitance @ Vr, F：481pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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BSDV10G120E2

Overview

The Bourns BSDV10G120E2 is a Silicon Carbide Schottky Diode housed in a TO247-2 package. It features a repetitive peak reverse voltage of 1200 V and an average forward current rating of 10 A. The device supports a non-repetitive peak forward surge current of 80 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 2.5 V at 10 A and 175 °C, with a typical reverse leakage current of 50 µA at 1200 V and 25 °C.

Feature Summary

High efficiency operation with low power loss
Low reverse leakage current
Reduced electromagnetic interference
Flame retardant epoxy compound

Applications

Switched-Mode Power Supplies (SMPS)
Power Factor Correction (PFC)
PV inverters
DC-DC converters
Motor drives

Procurement Notes

Verify the specific datasheet revision and electrical parameters against the manufacturer's official documentation before finalizing design specifications. Confirm compliance with RoHS and halogen-free requirements as stated in the product data sheet. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.

Selection Notes

Select this component for high-frequency applications requiring low forward voltage drop and reduced thermal resistance. The TO247-2 package is suitable for high-current rectification needs. Evaluate the 1200 V blocking capability and 10 A continuous current rating against circuit demands. Consider the wide operating temperature range for robust performance in demanding environments.

Part Context

This silicon carbide Schottky diode belongs to Bourns' SDV series, designed for advanced power conversion applications. The model utilizes SiC technology to achieve superior switching performance compared to traditional silicon devices. It is engineered for use in converters requiring high peak forward surge capability and minimal conduction losses.

Replacement Considerations

Consult the Bourns product selector or technical library for verified alternative part numbers within the same series or family that match required voltage, current, and package specifications.