BSF024N03LT3G

Single FETs, MOSFETs Overview

The BSF024N03LT3G is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 30 V and a continuous drain current of 15 A at 25 °C. The device exhibits a maximum on-state resistance of 0.0032 Ω at 10 V gate drive. It operates within a junction temperature range up to 150 °C and includes a built-in diode. The component utilizes a 2WDSON package with three terminals.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration with integrated body diode
• Enhancement mode operation for efficient switching control
• Low on-state resistance for reduced conduction losses
• Drain connected to the exposed thermal pad

Single FETs, MOSFETs Applications

• Powertrain applications requiring low-side switching
• Inductive load driving circuits
• High-current DC-DC converter stages
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix LT3G against official Infineon documentation to confirm pinout and packaging details, as variations exist within the OptiMOS family. Ensure the selected variant matches the required thermal management strategy for the 2WDSON package. Confirm RoHS compliance status through the manufacturer's current product qualification reports before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is required in a compact footprint. The 30 V rating suits 12 V or 24 V system architectures. Evaluate the thermal performance based on the 0.0032 Ω resistance and the specific PCB copper area available for heat dissipation from the drain-connected pad. Ensure gate drive voltages align with the specified threshold characteristics.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS power MOSFET portfolio, designed for automotive and industrial efficiency. The 2WDSON package provides robust thermal performance relative to its small size. The device integrates advanced trench technology to minimize resistance while maintaining reliability under high current conditions typical in modern power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other BSF series variants such as BSF024N03LT3GXUMA1 for identical electrical specifications but different tape-and-reel packaging configurations. Verify that any substitute maintains the same 30 V rating, 15 A current capacity, and compatible package dimensions for direct board replacement.