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BSF045N03MQ3 G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 18A/63A 2WDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSF045N03MQ3 G
- Description：MOSFET N-CH 30V 18A/63A 2WDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MG-WDSON-2, CanPAK M™
- Package / Case：3-WDSON
Single FETs, MOSFETs datasheet and documents for BSF045N03MQ3 G
Single FETs, MOSFETs Overview
The BSF045N03MQ3 G is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30V drain-source voltage rating and a continuous drain current of 18A at ambient temperature or 63A at case temperature. The device operates within a junction temperature range of -40°C to +150°C. It is housed in a surface-mount MG-WDSON-2 package, also known as CanPAK M. Key electrical characteristics include a maximum gate-source voltage of ±20V and a typical input capacitance of 2600 pF measured at 15V.
Single FETs, MOSFETs Feature Summary
- Engineered with advanced OptiMOS technology for high-efficiency power switching applications.
- Delivers superior performance compared to previous generations through robust power MOSFET design.
Single FETs, MOSFETs Applications
- High-efficiency power switching circuits
- DC-DC converter designs
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized channels due to obsolete status. Confirm datasheet revisions and specific lot traceability requirements before integration. Ensure storage conditions meet humidity sensitivity standards to prevent damage prior to assembly.
Single FETs, MOSFETs Selection Notes
Evaluate thermal management capabilities given the WDSON-2 package constraints. Compare total gate charge and on-resistance against system efficiency targets. Assess compatibility with existing driver logic levels and voltage ratings for reliable operation.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS family, designed to replace older technologies with improved switching characteristics. It serves as a single N-channel solution for low-voltage power applications requiring compact form factors and enhanced thermal performance.
Single FETs, MOSFETs Replacement Considerations
BSF885N03LQ3 G is a related part number within the same series but may differ in specific electrical parameters and packaging details. Verify pinout compatibility and absolute maximum ratings when considering substitutes.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
