BSF134N10NJ3GXUMA2

Description：MOSFET N-CH 100V 9A/40A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:09d2ed66e342 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSF134N10NJ3GXUMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 9A/40A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSF134N10NJ3GXUMA2

Description：MOSFET N-CH 100V 9A/40A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：13.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 43W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2
Package / Case：DirectFET™ Isometric ST

Single FETs, MOSFETs datasheet and documents for BSF134N10NJ3GXUMA2

BSF134N10NJ3GXUMA2

Single FETs, MOSFETs Overview

The BSF134N10NJ3 G is an n-channel power MOSFET from the OptiMOS™ 100V series, designed for high power density and energy efficiency. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 40 A at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 13.4 mΩ at VGS=10 V and 15.4 mΩ at VGS=6 V. Total gate charge (Qg) is typically 23 nC, with output charge (Qoss) at 32 nC. Operating junction temperature ranges from -40 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high switching frequency DC/DC converter applications
Features ultra-low gate and output charges combined with low on-state resistance
Compatible with DirectFET® package SJ footprint and outline
Supports double-sided cooling for superior thermal performance

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switches
Power management for high performance computing
High power density point of load converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches project requirements. Check datasheet revision history for updates. Ensure storage conditions comply with moisture sensitivity levels. Validate RoHS compliance status prior to integration.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance values against system heat dissipation capabilities. Compare gate charge parameters with driver output strength. Verify voltage ratings exceed peak circuit transients. Assess package compatibility with PCB layout constraints. Review safe operating area curves for pulsed current handling.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS™ Power-MOSFET family, specifically the 100V class. It utilizes silicon technology in an MG-WDSON-2 package. The product targets demanding voltage regulator solutions in solar, drives, datacom, and telecom sectors. It is qualified according to JEDEC standards for target applications.