BSG0810NDIATMA1

Overview

The BSG0810NDIATMA1 is a dual asymmetric N-channel OptiMOS™5 MOSFET in a PG-TISON8-4 Power Block package. It features a 25 V drain-source voltage and logic level operation rated at 4.5 V. The device integrates a Schottky-like diode and is optimized for high-performance Buck converters. Key electrical parameters include a maximum RDS(on) of 3 mΩ (Q1) and 0.85 mΩ (Q2) at 10 V, with continuous drain currents reaching 50 A at Tc=70°C. Thermal resistance to case is 4.3 K/W for Q1 and 1.8 K/W for Q2.

Feature Summary

• Dual asymmetric N-channel configuration with integrated Schottky-like diode
• Logic level gate drive capability rated at 4.5 V
• Optimized specifically for high-performance Buck converter applications

Applications

• High-performance synchronous Buck converters
• Point-of-load power supply stages
• DC-DC conversion modules requiring low gate charge

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-TISON8-4 package outline and marking code 0810NDI. Cross-reference the datasheet revision 2.1 for accurate thermal and electrical limits before finalizing procurement orders.

Selection Notes

Select this component for applications requiring asymmetric current handling where one switch carries significantly higher current than the other. The logic level rating allows direct drive from standard 4.5 V or 5 V controllers. Evaluate the distinct thermal resistances and on-resistance values to ensure adequate heat dissipation for both the high-current and low-current switches within the same package.

Part Context

This part belongs to the OptiMOS™5 family, utilizing Infineon's trench technology for low on-resistance and fast switching. It is designed as a monolithic solution combining two N-channel MOSFETs in a single lead-free, halogen-free package compliant with JEDEC standards for target applications.

Replacement Considerations

BSG0813NDI

FAQ

What is the difference between Q1 and Q2?

Q1 and Q2 are asymmetric; Q2 has a lower RDS(on) (max 0.85 mΩ at 10V) and higher continuous current capability compared to Q1 (max 3 mΩ at 10V), making Q2 suitable for the main power path.

Is the integrated diode a standard body diode?

No, it is a monolithically integrated Schottky-like diode, which typically offers lower forward voltage drop and faster recovery characteristics compared to a standard PN junction body diode.