BSH112,235

Single FETs, MOSFETs Overview

The BSH112,235 is an N-Channel MOSFET from the TrenchMOS series by NXP USA Inc. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 300 mA at 25°C ambient temperature. The device is housed in a surface-mount SOT-23 (TO-236AB) package. Maximum power dissipation is rated at 830 mW when case temperature is maintained. The component operates within a junction temperature range of -65°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchMOS technology for efficient switching performance
• Designed for surface-mount applications in compact layouts
• Supports wide operating temperature ranges for industrial environments

Single FETs, MOSFETs Applications

• Low-power switching circuits
• Battery protection modules
• Signal level shifting

Single FETs, MOSFETs Procurement Notes

Verify availability status as this specific part number may be obsolete or discontinued. Confirm exact pinout compatibility with existing PCB footprints before integration. Request updated datasheets from authorized distributors to ensure technical specifications match current design requirements. Validate that substitute components meet identical electrical ratings and thermal characteristics.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 60 V N-Channel MOSFET in a small SOT-23 package. Ensure the application current does not exceed 300 mA continuous drain limits. Consider thermal management strategies given the 830 mW dissipation rating. Verify gate drive voltage compatibility with the intended control logic levels for optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

This single FET belongs to NXP's TrenchMOS family, known for low on-resistance and fast switching speeds. The BSH112,235 variant specifically targets cost-sensitive consumer and industrial electronics where space constraints necessitate the SOT-23 form factor. It serves as a discrete solution for load switching and protection functions.

Single FETs, MOSFETs Replacement Considerations

Public sources indicate this part is obsolete. Seek substitutes with matching 60 V Vdss, 300 mA Id, and SOT-23 packaging. Verify equivalent Rds(on) and gate charge parameters to maintain circuit efficiency.