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BSH202,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is NEXPERIA BSH202 - SMALL SIGNAL F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSH202,215
- Description：NEXPERIA BSH202 - SMALL SIGNAL F
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSH202,215
Single FETs, MOSFETs Overview
The BSH202,215 is a P-channel enhancement-mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage of 30 V and a continuous drain current of 520 mA. The device utilizes an SOT-23-3 surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 900 mOhms and a typical gate charge of 2.9 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 417 mW.
Single FETs, MOSFETs Feature Summary
- P-channel enhancement mode construction for efficient switching applications
- Compact SOT-23-3 surface mount packaging for space-constrained designs
- Low gate charge characteristics supporting fast switching performance
Single FETs, MOSFETs Applications
- General purpose low-side or high-side switching circuits
- Battery protection and load management systems
- Signal level translation interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix to confirm the tape and reel quantity matches project requirements. Confirm RoHS compliance status through official documentation before integration. Check for lifecycle notifications as availability may vary across regions. Ensure thermal management aligns with the specified power dissipation limits during operation.
Single FETs, MOSFETs Selection Notes
Select this component when a compact P-channel switch is required for low-voltage applications. The 30 V rating suits single-cell battery systems. Verify that the 520 mA current capacity meets load demands. Consider the SOT-23-3 footprint constraints against available PCB real estate. Compare on-resistance values if conduction loss is a critical design parameter.
Single FETs, MOSFETs Part Context
This part belongs to the BSH202 series of small-signal MOSFETs from Nexperia. These devices are designed for general-purpose switching tasks in consumer electronics and industrial equipment. The series emphasizes reliability and consistent performance across varying temperature conditions. The component represents a standard solution for low-power control applications requiring minimal board space.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the P-channel type, 30 V minimum voltage rating, and SOT-23-3 package. Verify equivalent on-resistance and current handling capabilities. Cross-reference pinouts to ensure compatibility without circuit modification.
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