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BSH205,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET P-CH 12V 750MA TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSH205,215
- Description：MOSFET P-CH 12V 750MA TO236AB
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：400mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：680mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs：3.8 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 9.6 V
- FET Feature：-
- Power Dissipation (Max)：417mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23 (TO-236AB)
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSH205,215
Single FETs, MOSFETs Overview
The BSH205,215 is a P-channel enhancement mode logic level MOS transistor designed for battery-powered applications and high-speed digital interfacing. It features a very low threshold voltage and extremely fast switching capabilities. The device is supplied in the SOT23 subminiature surface mount package. Key electrical parameters include a drain-source voltage of -12 V, a continuous drain current of -0.75 A at 25°C, and a maximum on-state resistance of 0.5 Ω at VGS = -2.5 V.
Single FETs, MOSFETs Feature Summary
- Logic level compatible operation with very low threshold voltage
- Extremely fast switching characteristics suitable for high-speed digital interfacing
- Subminiature surface mount packaging for compact designs
Single FETs, MOSFETs Applications
- Battery powered applications
- High speed digital interfacing
Single FETs, MOSFETs Procurement Notes
Verify that the component is sourced from Nexperia, as the NXP Standard Product business was transferred to Nexperia in February 2017. Ensure documentation references are updated to reflect the current manufacturer. Confirm package integrity and anti-static handling requirements during transport and storage to protect the gate-source input from static discharge.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-channel MOSFET with low threshold voltage and fast switching speeds. Consider the SOT23 package size for space-constrained layouts. Evaluate thermal dissipation limits based on ambient temperature conditions and ensure drive voltages align with the specified logic level compatibility for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to the family of P-channel enhancement mode MOS transistors originally developed by Philips Semiconductors. The product specification defines its electrical and mechanical characteristics for use in power switching and interfacing applications. The transition to Nexperia maintains the technical specifications while updating branding and support channels.
Single FETs, MOSFETs Replacement Considerations
Consult Nexperia datasheets for direct replacements within the BSH series or equivalent P-channel MOSFETs in the SOT23 package. Verify matching electrical parameters such as threshold voltage, on-resistance, and package dimensions before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
