BSH205G2AR

$0.25

Description：MOSFET P-CH 20V 2.6A TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a6ba06576d3e Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSH205G2AR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 20V 2.6A TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSH205G2AR

Description：MOSFET P-CH 20V 2.6A TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：118mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：421 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：610mW (Ta), 10W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSH205G2AR

BSH205G2AR

Single FETs, MOSFETs Overview

The Nexperia BSH205G2AR is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in an SOT23 (TO-236AB) surface-mounted plastic package. It features a drain-source voltage rating of -20 V and a continuous drain current of -2.6 A at 25 °C. The device exhibits a typical on-state resistance of 97 mΩ at VGS = -4.5 V and ID = -2.6 A. It supports an extended junction temperature range up to 175 °C and includes an integrated source-drain diode with a reverse recovery time of 7 ns.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive applications
Trench MOSFET technology enabling very fast switching
Low threshold voltage design
Extended operating temperature range up to 175 °C

Single FETs, MOSFETs Applications

Relay driver circuits
High-speed line drivers
High-side load switches
General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'AR' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Confirm that the component status remains active for new designs. Ensure compatibility with standard SOT23 footprint dimensions during PCB layout. Validate thermal management requirements based on the specified junction-to-ambient resistance values under your specific mounting conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance and high-speed switching within a compact SOT23 form factor. Consider the -20 V rating and -2.6 A current capability when designing power stages. Evaluate the gate charge characteristics for driving efficiency. Verify that the logic level gate drive voltages align with your control circuitry requirements.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of discrete semiconductors, specifically within the Power MOSFET category. It utilizes Trench MOSFET technology to achieve improved performance metrics compared to planar devices. The SOT23 package provides a small outline suitable for space-constrained consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.