BSL214NH6327XTSA1

BSL214NH6327XTSA1

  • Description:MOSFET 2N-CH 20V 1.5A TSOP6-6
  • Series:OptiMOS™

SKU:72612fb201a2 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 1.5A TSOP6-6
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.5A
  • Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:143pF @ 10V
  • Power - Max:500mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:PG-TSOP6-6
  • Grade:Automotive
  • Qualification:AEC-Q101

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BSL214NH6327XTSA1

Overview

The BSL214NH6327XTSA1 is an OptiMOS™2 small-signal transistor featuring dual N-channel enhancement mode MOSFETs in a TSOP-6 surface-mount package. It supports a continuous drain current of 1.5 A and a pulsed drain current of 6 A, with a maximum drain-source voltage of 20 V. The device offers low on-state resistance of 140 mΩ at VGS=4.5 V and 250 mΩ at VGS=2.5 V, ensuring efficient switching performance. It includes avalanche energy ratings and reverse diode characteristics suitable for robust circuit designs.

Feature Summary

  • Dual N-channel configuration within a single compact TSOP-6 package
  • Super Logic Level operation optimized for 2.5 V gate drive applications
  • Avalanche rated capability for handling transient energy events
  • Qualified according to AEC-Q101 automotive standards

Applications

  • Low-side switching in automotive electronic control units
  • Logic level translation circuits requiring 2.5 V compatibility
  • Small signal amplification stages
  • General purpose switching applications in consumer electronics

Procurement Notes

Verify the component authenticity by checking the marking code sPM against official Infineon documentation. Confirm that the ordering suffix H6327 corresponds to the specified tape and reel packaging containing 3000 pieces per reel. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. The Super Logic Level feature makes it ideal for systems operating with lower gate drive voltages such as 2.5 V. Consider its 20 V breakdown voltage and 1.5 A continuous current rating for appropriate load management. Verify thermal dissipation needs based on the 250 K/W junction-to-ambient resistance for your specific PCB layout.

Part Context

This part belongs to Infineon's OptiMOS™2 family of small-signal transistors. It is designed to provide high efficiency and reliability in compact electronic designs. The dual configuration allows for space-saving implementations compared to using two separate single-channel devices. Its automotive qualification ensures suitability for demanding environmental conditions.

Replacement Considerations

Direct replacements must match the TSOP-6 package, dual N-channel topology, and similar electrical parameters including 20 V VDS and 1.5 A ID. Verify that any substitute also meets AEC-Q101 standards if used in automotive contexts. Check gate threshold voltage ranges to ensure compatibility with existing logic levels.

FAQ

What is the maximum pulsed drain current for the BSL214N?

The maximum pulsed drain current (ID,pulse) is 6 A at an ambient temperature of 25 °C.

Is the BSL214N qualified for automotive applications?

Yes, the BSL214N is qualified according to the AEC-Q101 standard for automotive use.

What is the typical gate charge (Qg) for this device?

The typical total gate charge (Qg) is 0.8 nC under specified test conditions.

BSL214NH6327XTSA1BSL214NH6327XTSA1

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