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BSL305SPEH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 5.3A TSOP-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSL305SPEH6327XTSA1
- Description：MOSFET P-CH 30V 5.3A TSOP-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSOP6-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for BSL305SPEH6327XTSA1
Single FETs, MOSFETs Overview
The BSL305SPEH6327XTSA1 is a P-channel OptiMOS™ power transistor rated for -30V drain-source voltage. It operates in enhancement mode with logic level compatibility at 4.5V and features an avalanche-rated design. The device supports a continuous drain current of -5.3A and delivers a maximum on-state resistance of 45mΩ at VGS=-10V. Packaged in PG-TSOP-6, it includes ESD protection and meets AEC-Q101 automotive qualification standards.
Single FETs, MOSFETs Feature Summary
- P-channel enhancement mode MOSFET with logic level gate drive capability
- Avalanche rated design supporting single pulse energy absorption
- Incorporates built-in electrostatic discharge (ESD) protection
- Qualified according to AEC-Q101 automotive reliability standards
Single FETs, MOSFETs Applications
- Automotive electronic control units
- Industrial motor control circuits
- Low-side switching applications
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the component status as discontinued or obsolete through official Infineon channels before finalizing procurement plans. Confirm that the specific H6327 tape and reel packaging variant matches your automated assembly requirements. Ensure compliance with RoHS and halogen-free material declarations during the sourcing process.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust P-channel switching with high surge tolerance. The low on-resistance minimizes conduction losses in power paths. Logic-level threshold simplifies driver interface requirements. Verify thermal dissipation capabilities against the specified junction-to-ambient resistance values for your PCB footprint.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ Power Transistor family from Infineon Technologies. It utilizes silicon technology optimized for industrial and multimarket applications. The product integrates advanced trench gate MOSFET architecture within a compact surface-mount package designed for efficient thermal performance.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for confirmed substitute part numbers. Cross-reference pinouts and electrical parameters carefully when evaluating alternative components.
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