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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 2A TSOP6-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：1V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：PG-TSOP6-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BSL308PEH6327XTSA1 is a dual P-channel enhancement-mode MOSFET array from the OptiMOS™ P3 series, housed in a PG-TSOP-6 surface-mount package. It features a maximum drain-source voltage of -30 V and a continuous drain current of -2.0 A at 25 °C. The device has a typical gate charge of -5 nC and a maximum on-state resistance of 80 mΩ at VGS = -10 V. It operates within a temperature range of -55 °C to 150 °C and includes monolithic ESD protection rated for HBM Class 2.
Feature Summary
- Dual P-channel configuration with logic-level operation suitable for low-voltage control applications
- Integrated electrostatic discharge (ESD) protection compliant with JESD22-A114 standards
- Qualified according to automotive reliability requirements under AEC-Q101 specifications
Applications
- Low-side switching in battery management systems
- Load switching in portable consumer electronics
- General-purpose signal routing in automotive modules
Procurement Notes
Verify the complete part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific ordering code matches the required tape and reel packaging format. Cross-reference the datasheet revision to validate all electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-power switching tasks. The TSOP-6 package provides a small footprint ideal for space-constrained designs. Ensure the application voltage remains below the -30 V rating and consider thermal derating for ambient temperatures exceeding 25 °C.
Part Context
This component belongs to the OptiMOS™ P3 family of small-signal transistors designed by Infineon Technologies. The series focuses on optimizing the trade-off between on-resistance and gate charge for efficient power management in compact electronic devices.
Replacement Considerations
BSL308PE
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is -8.0 A at an ambient temperature of 25 °C.
Does the device support avalanche energy handling?
Yes, the single-pulse avalanche energy rating is -10.7 mJ when driven at -2 A with a gate resistance of 25 Ω.
What is the reverse diode forward recovery characteristic?
The reverse recovery time is typically 14 ns, and the reverse recovery charge is approximately -5.9 nC under specified test conditions.
