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BSL373SNH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 2A TSOP-6. Review the specifications below when checking this part for your BOM.
The BSL373SNH6327XTSA1 is an N-channel enhancement mode OptiMOS™ small-signal MOSFET in a TSOP-6 package. It features a drain-source breakdown voltage of 100 V, a continuous drain current of 2.0 A at 25 °C, and a maximum on-state resistance of 0.23 Ω. The device is avalanche rated with single pulse energy of 33 mJ and reverse diode dv/dt capability of 6 kV/µs. Operating temperature ranges from -55 °C to +150 °C.
Verify the component marking 'sPY' against the datasheet to confirm authenticity. Ensure the ordering suffix matches H6327 for tape and reel packaging. Confirm RoHS compliance and halogen-free status per IEC61249-2-21 requirements during procurement validation.
Select this component for designs requiring high voltage isolation up to 100 V with moderate current handling. The TSOP-6 package suits space-constrained surface mount layouts. Consider thermal management for ambient temperatures exceeding 70 °C where current derating applies.
Part of Infineon's OptiMOS™ Small-Signal Transistor series designed for industrial and multimarket applications. The BSL373SN variant specifically targets automotive and industrial environments requiring reliable switching performance and ruggedness.
BSL373NH6327XTSA1
Yes, the device is qualified according to AEC-Q101 standards.
The single pulse avalanche energy (EAS) is rated at 33 mJ with ID=2 A and RGS=25 Ω.
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