BSM150GB120DN2FE325HOSA1

Description：IGBT MOD
Series：-

SKU:abf4e8769196 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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BSM150GB120DN2FE325HOSA1

Overview

The BSM150GB120DN2FE325HOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and a maximum continuous collector current of 150 A. The device integrates two N-channel IGBTs with built-in anti-parallel diodes in a series-connected configuration with a center tap. Packaged in a flange-mount module, it supports high-power switching applications requiring robust thermal management and electrical isolation.

Feature Summary

Dual IGBT structure with integrated freewheeling diodes for efficient power conversion
Center-tap configuration enabling versatile circuit topologies
Flange-mount package design optimized for effective heat dissipation

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency welding inverters

Procurement Notes

Verify the exact suffix FE325HOSA1 against official Infineon documentation to confirm specific manufacturing lot or packaging variations. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into production systems.

Selection Notes

Select this component for applications requiring 1200 V blocking capability and 150 A continuous current handling. Evaluate thermal resistance requirements based on the flange-mount package type and ensure adequate heatsinking infrastructure is available for the intended operating environment.

Part Context

This part belongs to Infineon's BSM series of insulated gate bipolar transistor modules. The series is designed for medium to high-power industrial applications, offering reliable performance in demanding electrical environments through advanced silicon technology and robust packaging solutions.

Replacement Considerations

Check for direct cross-references within the Infineon portfolio. Verify pinout compatibility and thermal characteristics if substituting with other 1200V/150A dual IGBT modules from different manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.