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BSM150GT120DN2BOSA1 is a three-phase full-bridge IGBT power module manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ technology and integrates fast recovery freewheeling diodes within a TRIPACK-39 insulated metal substrate package. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 150 A at a case temperature of 80°C, or 200 A at 25°C. Typical saturation voltage is 2.5 V at 25°C and 3.1 V at 125°C. Maximum power dissipation is 1250 W at 25°C, with a junction temperature range of -40°C to +150°C.
Verify the BOSA1 suffix indicates specific tape-and-reel packaging or RoHS compliance status as per official datasheets. Confirm manufacturer origin, as historical production involved EUPEC and Siemens entities now under Infineon. Ensure compatibility with standard gate drive voltages of ±15V before integration.
Select this module for applications requiring high power density in a compact TRIPACK-39 footprint. Evaluate thermal resistance RthJC of 0.12 K/W against system cooling capabilities. Consider the 10kHz to 20kHz operating frequency range when designing magnetic components and filtering circuits for the target application.
This component belongs to the DN2 series of IGBT modules, characterized by frequencies between 10kHz and 20kHz. It represents a legacy product line originally developed by EUPEC and Siemens, now maintained within Infineon's portfolio for industrial power conversion solutions requiring robust 1200V/150A performance.
Direct pin-compatible replacements may include other BSM150GT120 variants from the same family. Verify electrical parameters such as Vce(sat) and switching times against the original design requirements when substituting with newer generation modules like those from the EconoDUAL series.