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The BSM15GD120DN2E3224BOSA1 is a three-phase full-bridge IGBT power module manufactured by Infineon Technologies. It integrates fast free-wheeling diodes with an insulated metal base plate for thermal management. The module supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 100°C. Key electrical parameters include a typical saturation voltage of 2.1 V at 15 A and a forward voltage of 1.6 V for the integrated diode. The component operates within a junction temperature range of -40°C to +150°C and utilizes a PG-DSC-8 package.
Verify the specific suffix BOSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with existing PCB footprints and thermal interface materials. Cross-reference the part number with the latest datasheet revision to validate parameter consistency before procurement.
Select this module for low-power inverter designs requiring compact form factors. Evaluate thermal resistance requirements against the system's cooling capabilities. Confirm that the 15 A current rating meets peak load demands without exceeding the 150°C junction temperature limit under worst-case operating conditions.
This component belongs to the BSM series of three-phase IGBT modules from Infineon. It represents a legacy or specialized variant within the broader portfolio, often associated with EUPEC heritage products. The module is designed for general-purpose power conversion where moderate current levels and high voltage blocking are required.
Direct replacements may include BSM15GD120DN2 or BSM15GD120DLCE3224. Verify pinout compatibility and thermal characteristics when substituting. Check for updated suffixes indicating revised packaging or material compliance.