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Product Detailed Parameters
- Description：IGBT MOD 1200V 35A 200W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 25A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Power - Max：200 W
- Current - Collector Cutoff (Max)：800 µA
- Input Capacitance (Cies) @ Vce：1.65 nF @ 25 V
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Overview
The BSM25GD120DN2E3224BOSA1 is a silicon IGBT power module manufactured by Infineon Technologies. It features a six-element bridge configuration with built-in fast free-wheeling diodes. The device supports a collector-emitter maximum voltage of 1200 V and a continuous collector current of 25 A at 25°C. Key electrical parameters include a saturation voltage of 2.7 V, a gate-emitter leakage current of 150 nA, and a power dissipation rating of 160 W. The module operates within a temperature range of -40°C to +150°C and utilizes the EconoPACK 2 package for screw mounting.
Feature Summary
- Six-element bridge configuration integrating IGBTs and fast free-wheeling diodes
- High thermal performance enabled by EconoPACK 2 packaging
- Robust operation across extended industrial temperature ranges
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm component revision status. Confirm RoHS compliance details directly from the manufacturer datasheet as availability may vary by region. Ensure the supplier provides valid traceability documents matching the exact part number before finalizing acquisition.
Selection Notes
Select this module for applications requiring a compact six-pack topology with moderate current handling capabilities. The 1200V rating suits medium-voltage industrial systems. Verify that the required continuous current does not exceed 25 A under specified thermal conditions. Ensure the design accommodates the 160 W power dissipation limit using appropriate heatsinking solutions.
Part Context
This component belongs to the DN2 series of IGBT modules from Infineon. It represents a standard switching technology variant designed for general-purpose power conversion. The module integrates both switching and freewheeling elements into a single insulated package to reduce system footprint and interconnection complexity.
Replacement Considerations
Direct substitutes within the same family include BSM25GD120DN2E3224. Cross-referencing with other manufacturers requires careful evaluation of pinout compatibility, thermal resistance characteristics, and electrical parameter tolerances to ensure functional equivalence.
