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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 300A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：300A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5.6V @ 91mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：14000pF @ 10V
- Power - Max：1260W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The BSM300D12P3E005 is a silicon carbide (SiC) half-bridge power module manufactured by ROHM Semiconductor. It features an E-type housing with dimensions of 152.0 x 62.0 mm and a thickness of 18.0 mm. The device supports a drain-source voltage of 1200 V and a continuous drain current of 300 A. Total power dissipation is rated at 1260 W, with a maximum junction temperature of 175 °C. Storage temperatures range from -40 °C to 125 °C. This component is designated as a product for existing customers only and is not recommended for new designs.
Feature Summary
- Low surge capability and reduced switching loss characteristics
- Enables high-speed switching operations
- Reduced temperature dependence in performance
Applications
- Evaluation using the BSMGD3G12D24-EVK001 gate driver board for third/fourth generation SiC modules
Procurement Notes
This part number is restricted to supporting existing customer orders and is not available for new design-in projects. Verification of supply status through official ROHM channels or authorized distributors is required before procurement planning. Ensure compatibility with the specified E-type packaging and corrugated cardboard shipping configuration.
Selection Notes
Engineers should consider alternative active components for new designs, as this model is explicitly excluded from new design recommendations. Verify that the 1200V rating and 300A current capacity align with system requirements. Confirm thermal management solutions can handle the 1260W dissipation within the 175°C junction limit.
Part Context
The BSM300D12P3E005 belongs to ROHM's SiC power module lineup utilizing E-type housing. It is paired with the BSMGD3G12D24-EVK001 evaluation board, which provides optimal and safe driving for full SiC modules containing third or fourth generation SiC-MOSFETs in G and E type housings.
Replacement Considerations
No public substitute part numbers are confirmed in the provided documentation. As this component is not recommended for new designs, selecting an active ROHM SiC half-bridge module with similar electrical ratings is necessary for new implementations.
