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The BSM35GD120DN2E3224BOSA1 is a silicon IGBT module from Infineon Technologies, housed in an EconoPACK 2 flange-mount package. It features a hex configuration with six elements and built-in diodes. Key electrical parameters include a collector-emitter maximum voltage of 1.2 kV, a continuous collector current of 50 A at 25°C, and a collector-emitter saturation voltage of 2.7 V. The device has a power dissipation rating of 280 W, a gate-emitter leakage current of 150 nA, and operates within a temperature range of -40°C to +150°C.
Verify authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix BOSA1 matches project requirements, as it denotes a particular revision or packaging variant. Check for end-of-life notifications, as discontinuance notices may affect long-term supply availability. Ensure compliance with RoHS directives if required by the target application standards.
Select this component when a 1.2 kV rating and 50 A continuous current capacity are required in a compact form factor. The EconoPACK 2 package is suitable for designs needing screw-mount installation and high thermal performance. Consider the 2.7 V saturation voltage for efficiency calculations in low-to-medium power switching applications.
This part belongs to Infineon's BSM series of IGBT modules, which are widely used in power electronics. The BOSA1 suffix typically indicates a specific tape-and-reel or tray packaging option compared to standard bulk versions. It is a successor or alternative to earlier revisions like the BSM35GD120DN2E32, maintaining core electrical characteristics while potentially updating manufacturing processes.
Direct replacements include BSM35GD120DN2E32. Verify pinout compatibility and thermal resistance values before substitution. Other BSM35GD120 variants may differ in packaging or suffix specifications.