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The BSM400GA120DN2HOSA1 is a single IGBT module from Infineon's BSM series, designed for high-power industrial applications. It features a 1200 V collector-emitter voltage and a nominal collector current of 400 A at 25°C. The device integrates an NPT (Non-Punch Through) IGBT with a fast recovery anti-parallel diode in a compact half-bridge configuration. Key electrical parameters include a maximum DC collector current of 800 A under pulsed conditions and a typical on-state voltage drop of 2.35 V at rated current. The module utilizes a silver sintered die-attach technology for enhanced thermal cycling robustness and operates within a junction temperature range of -40°C to +175°C.
Verify the specific suffix HOSA1 against official datasheets to confirm pinout compatibility and thermal interface specifications. Ensure that ordering documentation matches the exact part number to avoid substitution errors in high-power assemblies. Cross-reference manufacturing dates with long-term availability programs if required for production longevity.
Select this component when a 1200 V rating and 400 A continuous current capacity are required in a single-phase half-bridge topology. Evaluate thermal resistance values against the heatsink design to ensure junction temperatures remain within safe operating limits during peak load conditions. Consider the package dimensions for PCB layout and mechanical mounting constraints.
This module belongs to Infineon's BSM series of press-pack style modules, which are widely used in demanding industrial environments. The series is known for its balance between performance and ruggedness, offering a reliable solution for applications requiring high current density and robust thermal management capabilities over extended operational lifetimes.
Direct replacements must match the 1200 V / 400 A specification and identical package footprint. Verify that alternative parts support the same thermal interface requirements and pin configuration. Consult official cross-reference lists for qualified equivalents that maintain functional parity without redesigning the host circuit.